Image 2SK1930(TE24L,Q)
型号:

2SK1930(TE24L,Q)

厂商: Toshiba Semiconductor and Storage Toshiba Semiconductor and Storage
标准:
分类: 半导体FET - 单
描述: mosfet N-CH 1000v 4A to220sm
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2SK1930(TE24L,Q)的详细信息

Datasheets:
2SK1930:
Mosfets Prod Guide:
Product Photos:
TO-263:
Standard Package : 1,000
Category: Discrete Semiconductor Products
Family: FETs - Single
Series: -
Packaging : Tape & Reel (TR)
FET Type: MOSFET N-Channel, Metal Oxide
FET Feature: Standard
Drain to Source Voltage (Vdss): 1000V (1kV)
Current - Continuous Drain (Id) @ 25°C: 4A (Ta)
Rds On (Max) @ Id, Vgs: 3.8 Ohm @ 2A, 10V
Vgs(th) (Max) @ Id: 3.5V @ 1mA
Gate Charge (Qg) @ Vgs: 60nC @ 10V
Input Capacitance (Ciss) @ Vds: 700pF @ 25V
Power - Max: 100W
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Supplier Device Package: TO-220SM