Image 2SC5200N(S1,E,S)
型号:

2SC5200N(S1,E,S)

厂商: Toshiba
标准:
分类: 半导体分离式半导体
描述: transistors bipolar - bjt power transistor PC=150w; F=30mhz
报错 收藏

Datasheet下载地址

本地下载 >> 厂商下载 >>

2SC5200N(S1,E,S)的详细信息

Manufacturer: Toshiba
Product Category: Transistors Bipolar - BJT
RoHS: Yes
Configuration: Triple
Transistor Polarity: NPN
Collector- Base Voltage VCBO: 230 V
Collector- Emitter Voltage VCEO Max: 230 V
Emitter- Base Voltage VEBO: 5 V
Collector-Emitter Saturation Voltage: 0.4 V
Maximum DC Collector Current: 15 A
Gain Bandwidth Product fT: 30 MHz
Maximum Operating Temperature: + 150 C
Mounting Style: Through Hole
Package / Case: TO-3P-3
Brand: Toshiba
Continuous Collector Current: 15 A
DC Collector/Base Gain hfe Min: 35
DC Current Gain hFE Max: 160
Maximum Power Dissipation: 150 W
Minimum Operating Temperature: - 55 C