Image 2SA1955FVATPL3Z
型号:

2SA1955FVATPL3Z

厂商: Toshiba Semiconductor and Storage Toshiba Semiconductor and Storage
标准:
分类: 半导体晶体管(BJT) - 单路
描述: transistor pnp vesm
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2SA1955FVATPL3Z的详细信息

Datasheets:
2SA1955F:
Product Photos:
2SA1955F SC-101, SOT-883:
Standard Package : 1
Category: Discrete Semiconductor Products
Family: Transistors (BJT) - Single
Series: -
Packaging : Cut Tape (CT)
Transistor Type: PNP
Current - Collector (Ic) (Max): 400mA
Voltage - Collector Emitter Breakdown (Max): 12V
Vce Saturation (Max) @ Ib, Ic: 250mV @ 10mA, 200mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 300 @ 10mA, 2V
Power - Max: 100mW
Frequency - Transition: 130MHz
Mounting Type: Surface Mount
Package / Case: SC-101, SOT-883
Supplier Device Package: CST3
Dynamic Catalog: PNP Transistors
Other Names: 2SA1955FVATPL3ZCT