Image 2SA1312GRTE85LF
型号:

2SA1312GRTE85LF

厂商: Toshiba
标准:
分类: 半导体分离式半导体
描述: transistors bipolar - bjt pnp audio amp vceo -120v hfe 700
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2SA1312GRTE85LF的详细信息

Manufacturer: Toshiba
Product Category: Transistors Bipolar - BJT
RoHS: Yes
Brand: Toshiba
Configuration: Single
Transistor Polarity: PNP
Collector- Base Voltage VCBO: - 120 V
Collector- Emitter Voltage VCEO Max: - 120 V
Emitter- Base Voltage VEBO: - 5 V
Gain Bandwidth Product fT: 100 MHz
Mounting Style: SMD/SMT
Package / Case: TO-236 MOD
Continuous Collector Current: - 100 mA
DC Collector/Base Gain hfe Min: 200
DC Current Gain hFE Max: 700
Maximum Power Dissipation: 150 mW
Packaging: Reel
Factory Pack Quantity: 3000