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Image 2SA1020-Y(TE6,F,M)
型号:

2SA1020-Y(TE6,F,M)

厂商: Toshiba
标准:
分类: 半导体分离式半导体
描述: transistors bipolar - bjt pnp -50v -2A 900mw
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2SA1020-Y(TE6,F,M)的详细信息

Manufacturer: Toshiba
Product Category: Transistors Bipolar - BJT
RoHS: Yes
Brand: Toshiba
Configuration: Single
Transistor Polarity: PNP
Collector- Base Voltage VCBO: - 50 V
Collector- Emitter Voltage VCEO Max: - 50 V
Emitter- Base Voltage VEBO: - 5 V
Collector-Emitter Saturation Voltage: - 0.5 V
Maximum DC Collector Current: - 2 A
Gain Bandwidth Product fT: 100 MHz
Maximum Operating Temperature: +150 C
Mounting Style: Through Hole
Package / Case: TO-92 MOD
Continuous Collector Current: - 2 A
DC Collector/Base Gain hfe Min: 70
DC Current Gain hFE Max: 240
Maximum Power Dissipation: 900 mW
Minimum Operating Temperature: - 55 C
Factory Pack Quantity: 3000