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Fairchild Semiconductor 
2N7000的详细信息
| Manufacturer： | Fairchild Semiconductor |
|---|---|
| Product Category： | MOSFET |
| RoHS： | Yes |
| Transistor Polarity： | N-Channel |
| Vds - Drain-Source Breakdown Voltage： | 60 V |
| Vgs - Gate-Source Breakdown Voltage： | 20 V |
| Id - Continuous Drain Current： | 200 mA |
| Rds On - Drain-Source Resistance： | 1.2 Ohms |
| Configuration： | Single |
| Maximum Operating Temperature： | + 150 C |
| Pd - Power Dissipation： | 400 mW |
| Mounting Style： | Through Hole |
| Package / Case： | TO-92-3 |
| Packaging： | Bulk |
| Brand： | Fairchild Semiconductor |
| Channel Mode： | Enhancement |
| Forward Transconductance - Min： | 0.1 S |
| Minimum Operating Temperature： | - 55 C |
| Series： | 2N7000 |
| Factory Pack Quantity： | 2000 |
| Part # Aliases： | 2N7000_NL |
| Unit Weight： | 201 mg |
2N7000相关文档
- Application Note: AN-7510: A New PSPICE Subcircuit for the Power MOSFET Featuring Global Temperature Options
- Application Note: AN-7533: A Revised MOSFET Model With Dynamic Temperature Compensation
- Application Note: AN-9010: MOSFET Basics
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