2N6660的详细信息
Datasheets: | |
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2N6660: | |
PCN Assembly/Origin: | |
3L TO-39 Qualification Assembly Site Update 22/Aug/2014: | |
Additional Fabrication Site 03/Sep/2014: | |
Standard Package : | 500 |
Category: | Discrete Semiconductor Products |
Family: | FETs - Single |
Series: | - |
Packaging : | Bag |
FET Type: | MOSFET N-Channel, Metal Oxide |
FET Feature: | Standard |
Drain to Source Voltage (Vdss): | 60V |
Current - Continuous Drain (Id) @ 25°C: | 410mA (Ta) |
Rds On (Max) @ Id, Vgs: | 3 Ohm @ 1A, 10V |
Vgs(th) (Max) @ Id: | 2V @ 1mA |
Gate Charge (Qg) @ Vgs: | - |
Input Capacitance (Ciss) @ Vds: | 50pF @ 24V |
Power - Max: | 6.25W |
Mounting Type: | Through Hole |
Package / Case: | TO-205AD, TO-39-3 Metal Can |
Supplier Device Package: | TO-39 |
Dynamic Catalog: | N-Channel Standard FETs |
Other Names: | 2N6660MC |
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